Greens function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure
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Greens function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure
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Abstract
The gate voltage dependence of the low-field electron mobility has been investigated in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure using a real-time Greens function formalism. All scattering mechanisms relevant to this material system have been incorporated into a theoretical model, including alloy disorder scattering, Coulomb scattering from ionized impurities in the buffer layer, and acoustic phonon and piezoelectric scattering. The simulation results for the subband structure suggest the occupation of two subbands at VG=0V. Good agreement is observed between the simulated sheet electron densities and the experimentally extracted ones from Hall and Shubnikov-de Haas oscillatory magnetoresistance measurements. The mobility results for the structure investigated suggest that alloy-disorder scattering is the dominant mobility degradation mechanism. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Greens function approach for transport calculation in a In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As modulation-doped heterostructure</title> <author><name sortKey="Vasileska, D" uniqKey="Vasileska D">D. Vasileska</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Prasad, C" uniqKey="Prasad C">C. Prasad</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Wieder, H H" uniqKey="Wieder H">H. H. Wieder</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Ferry, D K" uniqKey="Ferry D">D. K. Ferry</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Electrical Engineering, Arizona State University, Tempe</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0139474</idno><date when="2003-03-15">2003-03-15</date><idno type="stanalyst">PASCAL 03-0139474 AIP</idno><idno type="RBID">Pascal:03-0139474</idno><idno type="wicri:Area/Main/Corpus">00DA33</idno><idno type="wicri:Area/Main/Repository">00C564</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Digital simulation</term><term>Electron density</term><term>Electron mobility</term><term>Gallium arsenides</term><term>Green's function methods</term><term>Hall effect</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor heterojunctions</term><term>Shubnikov-de Haas effect</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7340K</term><term>8105E</term><term>7220D</term><term>7220M</term><term>0230</term><term>7220F</term><term>7280E</term><term>7220J</term><term>Etude théorique</term><term>Indium composé</term><term>Gallium arséniure</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Mobilité électron</term><term>Méthode fonction Green</term><term>Simulation numérique</term><term>Densité électron</term><term>Effet Hall</term><term>Effet Shubnikov de Haas</term><term>Hétérojonction semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The gate voltage dependence of the low-field electron mobility has been investigated in a In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As modulation-doped heterostructure using a real-time Greens function formalism. All scattering mechanisms relevant to this material system have been incorporated into a theoretical model, including alloy disorder scattering, Coulomb scattering from ionized impurities in the buffer layer, and acoustic phonon and piezoelectric scattering. The simulation results for the subband structure suggest the occupation of two subbands at V<sub>G</sub>=0V. Good agreement is observed between the simulated sheet electron densities and the experimentally extracted ones from Hall and Shubnikov-de Haas oscillatory magnetoresistance measurements. The mobility results for the structure investigated suggest that alloy-disorder scattering is the dominant mobility degradation mechanism. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>93</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Greens function approach for transport calculation in a In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As modulation-doped heterostructure</s1> </fA08><fA11 i1="01" i2="1"><s1>VASILESKA (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>PRASAD (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>WIEDER (H. H.)</s1></fA11><fA11 i1="04" i2="1"><s1>FERRY (D. K.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>3359-3363</s1></fA20><fA21><s1>2003-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0139474</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The gate voltage dependence of the low-field electron mobility has been investigated in a In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As modulation-doped heterostructure using a real-time Greens function formalism. All scattering mechanisms relevant to this material system have been incorporated into a theoretical model, including alloy disorder scattering, Coulomb scattering from ionized impurities in the buffer layer, and acoustic phonon and piezoelectric scattering. The simulation results for the subband structure suggest the occupation of two subbands at V<sub>G</sub>=0V. Good agreement is observed between the simulated sheet electron densities and the experimentally extracted ones from Hall and Shubnikov-de Haas oscillatory magnetoresistance measurements. 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